STGP5H60DF
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H S
$1.63
Available to order
Reference Price (USD)
1+
$1.23000
50+
$0.98560
100+
$0.86240
500+
$0.66880
1,000+
$0.52800
2,500+
$0.49280
5,000+
$0.46816
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the STGP5H60DF Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGP5H60DF ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGP5H60DF for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
- Power - Max: 88 W
- Switching Energy: 56µJ (on), 78.5µJ (off)
- Input Type: Standard
- Gate Charge: 43 nC
- Td (on/off) @ 25°C: 30ns/140ns
- Test Condition: 400V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 134.5 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
onsemi
FGA30N60LSDTU
STMicroelectronics
STGP10NC60S
Infineon Technologies
IGP50N60T
IXYS
IXYX140N120A4
Diodes Incorporated
DGTD65T40S1PT
onsemi
NGTG25N120FL2WG
Infineon Technologies
IKZA75N65RH5XKSA1
onsemi
FGH75T65UPD
STMicroelectronics
STGWA8M120DF3
IXYS