IKW50N65ET7XKSA1
Infineon Technologies
Infineon Technologies
IKW50N65ET7XKSA1
$6.04
Available to order
Reference Price (USD)
1+
$6.04000
500+
$5.9796
1000+
$5.9192
1500+
$5.8588
2000+
$5.7984
2500+
$5.738
Exquisite packaging
Discount
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The IKW50N65ET7XKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IKW50N65ET7XKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IKW50N65ET7XKSA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
- Power - Max: 273 W
- Switching Energy: 1.2mJ (on), 850µJ (off)
- Input Type: Standard
- Gate Charge: 290 nC
- Td (on/off) @ 25°C: 26ns/350ns
- Test Condition: 400V, 50A, 9Ohm, 15V
- Reverse Recovery Time (trr): 93 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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