IXA12IF1200TC-TUB
IXYS

IXYS
IGBT 1200V 20A 85W TO268
$4.70
Available to order
Reference Price (USD)
1+
$4.69817
500+
$4.6511883
1000+
$4.6042066
1500+
$4.5572249
2000+
$4.5102432
2500+
$4.4632615
Exquisite packaging
Discount
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Upgrade your power management systems with the IXA12IF1200TC-TUB Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXA12IF1200TC-TUB provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXA12IF1200TC-TUB for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
- Power - Max: 85 W
- Switching Energy: 1.1mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 27 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 10A, 100Ohm, 15V
- Reverse Recovery Time (trr): 350 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA