IKW75N65ET7XKSA1
Infineon Technologies
Infineon Technologies
IKW75N65ET7XKSA1
$8.89
Available to order
Reference Price (USD)
1+
$8.89000
500+
$8.8011
1000+
$8.7122
1500+
$8.6233
2000+
$8.5344
2500+
$8.4455
Exquisite packaging
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Enhance your electronic projects with the IKW75N65ET7XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKW75N65ET7XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKW75N65ET7XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
- Power - Max: 333 W
- Switching Energy: 2.17mJ (on), 1.23mJ (off)
- Input Type: Standard
- Gate Charge: 435 nC
- Td (on/off) @ 25°C: 28ns/310ns
- Test Condition: 400V, 75A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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