IKW25N120H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 50A 326W TO247-3
$6.90
Available to order
Reference Price (USD)
1+
$7.32000
10+
$6.66400
240+
$5.60642
720+
$4.94886
1,200+
$4.37706
Exquisite packaging
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Discover the IKW25N120H3FKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IKW25N120H3FKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IKW25N120H3FKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 326 W
- Switching Energy: 2.65mJ
- Input Type: Standard
- Gate Charge: 115 nC
- Td (on/off) @ 25°C: 27ns/277ns
- Test Condition: 600V, 25A, 23Ohm, 15V
- Reverse Recovery Time (trr): 290 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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