RGTV80TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 40A FIELD STOP TRENCH IGBT
$6.41
Available to order
Reference Price (USD)
1+
$6.41000
500+
$6.3459
1000+
$6.2818
1500+
$6.2177
2000+
$6.1536
2500+
$6.0895
Exquisite packaging
Discount
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Optimize your power systems with the RGTV80TS65DGC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RGTV80TS65DGC11 delivers consistent and reliable operation. Trust Rohm Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 78 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 234 W
- Switching Energy: 1.02mJ (on), 710µJ (off)
- Input Type: Standard
- Gate Charge: 81 nC
- Td (on/off) @ 25°C: 39ns/113ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 101 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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