IKW75N65EL5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 75A FAST DIODE TO247-3
$9.99
Available to order
Reference Price (USD)
1+
$10.10000
10+
$9.19800
240+
$7.73792
720+
$6.83035
1,200+
$6.04115
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IKW75N65EL5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKW75N65EL5XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKW75N65EL5XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
- Power - Max: 536 W
- Switching Energy: 1.61mJ (on), 3.2mJ (off)
- Input Type: Standard
- Gate Charge: 436 nC
- Td (on/off) @ 25°C: 40ns/275ns
- Test Condition: 400V, 75A, 4Ohm, 15V
- Reverse Recovery Time (trr): 114 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
onsemi
HGT1S10N120BNST
Fairchild Semiconductor
FGA25S125P-SN00337
Toshiba Semiconductor and Storage
GT30J121(Q)
onsemi
FGY40T120SMD
Infineon Technologies
IKW50N60DTPXKSA1
Rohm Semiconductor
RGTH00TK65DGC11
STMicroelectronics
STGWT30V60F
STMicroelectronics
STGDL6NC60DT4
IXYS
IXYA20N120A4HV
IXYS