IXFR32N100P
IXYS
IXYS
MOSFET N-CH 1000V 18A ISOPLUS247
$21.99
Available to order
Reference Price (USD)
30+
$15.63267
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFR32N100P from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXFR32N100P offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SIR873DP-T1-GE3
NXP USA Inc.
PSMN5R8-30LL,115
onsemi
NVTFWS002N04CTAG
Texas Instruments
CSD25201W15
Microchip Technology
MSC015SMA070B
onsemi
FDPF390N15A
Infineon Technologies
BSP320SL6433
Goford Semiconductor
5N20A
PN Junction Semiconductor
P3M06060L8
Renesas Electronics America Inc