SIR873DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 150V 37A PPAK SO-8
$1.71
Available to order
Reference Price (USD)
3,000+
$0.83450
6,000+
$0.80555
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SIR873DP-T1-GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SIR873DP-T1-GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
NXP USA Inc.
PSMN5R8-30LL,115
onsemi
NVTFWS002N04CTAG
Texas Instruments
CSD25201W15
Microchip Technology
MSC015SMA070B
onsemi
FDPF390N15A
Infineon Technologies
BSP320SL6433
Goford Semiconductor
5N20A
PN Junction Semiconductor
P3M06060L8
Renesas Electronics America Inc
2SK3573-AZ
IXYS