IXXX300N60B3
IXYS
IXYS
IGBT 600V 550A 2300W TO247
$33.41
Available to order
Reference Price (USD)
1+
$25.77000
10+
$23.83400
30+
$21.90200
120+
$20.35592
270+
$18.68107
510+
$17.77924
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the IXXX300N60B3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXXX300N60B3 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 550 A
- Current - Collector Pulsed (Icm): 1140 A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
- Power - Max: 2300 W
- Switching Energy: 3.45mJ (on), 2.86mJ (off)
- Input Type: Standard
- Gate Charge: 460 nC
- Td (on/off) @ 25°C: 50ns/190ns
- Test Condition: 400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
Related Products
Fairchild Semiconductor
SGH15N120RUFDTU
onsemi
TIG074E8-TL-H
Infineon Technologies
IGW40N65H5FKSA1
onsemi
HGTG11N120CND
onsemi
AFGB30T65SQDN
Infineon Technologies
SKB02N60ATMA1
IXYS
IXXX100N60B3H1
Infineon Technologies
IKD03N60RFATMA1
Alpha & Omega Semiconductor Inc.
AOD7B65M3
STMicroelectronics