RGC80TSX8RGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT
$9.87
Available to order
Reference Price (USD)
1+
$9.87000
500+
$9.7713
1000+
$9.6726
1500+
$9.5739
2000+
$9.4752
2500+
$9.3765
Exquisite packaging
Discount
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The RGC80TSX8RGC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGC80TSX8RGC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGC80TSX8RGC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1800 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
- Power - Max: 535 W
- Switching Energy: 1.85mJ (on), 1.6mJ (off)
- Input Type: Standard
- Gate Charge: 468 nC
- Td (on/off) @ 25°C: 80ns/565ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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