RGTH80TS65GC13
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V
$5.74
Available to order
Reference Price (USD)
1+
$5.74000
500+
$5.6826
1000+
$5.6252
1500+
$5.5678
2000+
$5.5104
2500+
$5.453
Exquisite packaging
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The RGTH80TS65GC13 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGTH80TS65GC13 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 234 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 34ns/120ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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