SGS10N60RUFDTU
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.41
Available to order
Reference Price (USD)
1+
$2.54000
10+
$2.28700
100+
$1.85190
500+
$1.53430
1,000+
$1.28355
Exquisite packaging
Discount
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The SGS10N60RUFDTU Single IGBT transistor by Fairchild Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The SGS10N60RUFDTU ensures precise power control and long-term stability. With Fairchild Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate SGS10N60RUFDTU into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
- Power - Max: 55 W
- Switching Energy: 141µJ (on), 215µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 15ns/36ns
- Test Condition: 300V, 10A, 20Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
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