SI4936BDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 6.9A 8-SOIC
$1.38
Available to order
Reference Price (USD)
2,500+
$0.62320
5,000+
$0.59394
12,500+
$0.57304
Exquisite packaging
Discount
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Upgrade your electronic designs with the SI4936BDY-T1-GE3 by Vishay Siliconix, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the SI4936BDY-T1-GE3 ensures energy efficiency and robust performance. Vishay Siliconix's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
- Power - Max: 2.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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