SIZ710DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 16A POWERPAIR
$1.56
Available to order
Reference Price (USD)
3,000+
$0.70520
6,000+
$0.67209
15,000+
$0.64844
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the SIZ710DT-T1-GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SIZ710DT-T1-GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 16A, 35A
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
- Power - Max: 27W, 48W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerPair™
- Supplier Device Package: 6-PowerPair™
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