SQ4949EY-T1_BE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2 P-CH 30V 7.5A 8SOIC
$1.69
Available to order
Reference Price (USD)
1+
$1.69000
500+
$1.6731
1000+
$1.6562
1500+
$1.6393
2000+
$1.6224
2500+
$1.6055
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance SQ4949EY-T1_BE3 from Vishay Siliconix, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the SQ4949EY-T1_BE3 delivers unmatched performance. Trust Vishay Siliconix's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
- Power - Max: 3.3W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Diodes Incorporated
HTMN5130SSD-13
Panjit International Inc.
PJS6832_S2_00001
Vishay Siliconix
SIA910EDJ-T1-GE3
Microchip Technology
MSCSM120HM50CT3AG
Vishay Siliconix
SI4590DY-T1-GE3
Microchip Technology
MSCSM120AM03CT6LIAG
Infineon Technologies
BSO203PHXUMA1
Toshiba Semiconductor and Storage
SSM6N68NU,LF
EPC
EPC2108
Alpha & Omega Semiconductor Inc.