SQD45P03-12_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 50A TO252
$1.86
Available to order
Reference Price (USD)
2,000+
$0.77220
6,000+
$0.74360
10,000+
$0.72800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQD45P03-12_GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
RF4E080GNTR
Renesas Electronics America Inc
2SK1934-E
Microchip Technology
MSC080SMA120S
Vishay Siliconix
SIHD7N60ET5-GE3
Vishay Siliconix
SIR167DP-T1-GE3
Infineon Technologies
IRFH5104TR2PBF
Diodes Incorporated
ZVN4206AV
Rohm Semiconductor
R6004JNXC7G
IXYS
IXTT69N30P
Harris Corporation