STGP10NB60SD
STMicroelectronics
STMicroelectronics
IGBT 600V 29A 80W TO220
$1.61
Available to order
Reference Price (USD)
1,000+
$2.00655
Exquisite packaging
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Upgrade your power management systems with the STGP10NB60SD Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGP10NB60SD provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGP10NB60SD for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 29 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
- Power - Max: 80 W
- Switching Energy: 600µJ (on), 5mJ (off)
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: 700ns/1.2µs
- Test Condition: 480V, 10A, 1kOhm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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