STGYA75H120DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 1200 V, 7
$12.24
Available to order
Reference Price (USD)
1+
$12.24000
500+
$12.1176
1000+
$11.9952
1500+
$11.8728
2000+
$11.7504
2500+
$11.628
Exquisite packaging
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Discover the STGYA75H120DF2 Single IGBT transistor by STMicroelectronics, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the STGYA75H120DF2 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the STGYA75H120DF2 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
- Power - Max: 750 W
- Switching Energy: 4.3mJ (on), 3.9mJ (off)
- Input Type: Standard
- Gate Charge: 313 nC
- Td (on/off) @ 25°C: 61ns/366ns
- Test Condition: 600V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 356 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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