YJG15N15B-F1-0100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 150V 15A PDFN5060-8L
$1.09
Available to order
Reference Price (USD)
1+
$1.09000
500+
$1.0791
1000+
$1.0682
1500+
$1.0573
2000+
$1.0464
2500+
$1.0355
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the YJG15N15B-F1-0100HF by Yangzhou Yangjie Electronic Technology Co.,Ltd, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the YJG15N15B-F1-0100HF is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerLDFN
Related Products
Texas Instruments
CSD19536KTT
Infineon Technologies
IPP65R095C7XKSA1
Microchip Technology
APT5010LVFRG
Vishay Siliconix
SIHG22N60EF-GE3
Infineon Technologies
IPA60R099P7XKSA1
Toshiba Semiconductor and Storage
SSM6J212FE,LF
Renesas Electronics America Inc
NP75N04VUK-E1-AY
Microchip Technology
TP2635N3-G
Toshiba Semiconductor and Storage
TK560P65Y,RQ
IXYS