ZXMN3A06DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 4.9A 8-SOIC
$1.26
Available to order
Reference Price (USD)
500+
$0.75570
1,000+
$0.61050
2,500+
$0.57420
5,000+
$0.54879
12,500+
$0.53064
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the ZXMN3A06DN8TA, a premium Transistors - FETs, MOSFETs - Arrays product from Diodes Incorporated. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the ZXMN3A06DN8TA delivers consistent and reliable operation. Diodes Incorporated's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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