NE68819-T1-A
Renesas
Renesas
NPN SILICON AMPLIFIER AND OSCILL
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
Discount
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The NE68819-T1-A RF Bipolar Junction Transistor (BJT) by Renesas is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the NE68819-T1-A is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Renesas for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
- Gain: 8dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75 (USM)
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