RGS80TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
8US SHORT-CIRCUIT TOLERANCE, 650
$8.43
Available to order
Reference Price (USD)
1+
$8.43000
500+
$8.3457
1000+
$8.2614
1500+
$8.1771
2000+
$8.0928
2500+
$8.0085
Exquisite packaging
Discount
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Upgrade your power management systems with the RGS80TS65DHRC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGS80TS65DHRC11 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGS80TS65DHRC11 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 73 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 272 W
- Switching Energy: 1.05mJ (on), 1.03mJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 37ns/112ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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