RGTV60TS65GC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$5.14
Available to order
Reference Price (USD)
1+
$4.13000
10+
$3.71300
25+
$3.51000
100+
$3.04200
450+
$2.88600
900+
$2.58960
1,350+
$2.18400
Exquisite packaging
Discount
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The RGTV60TS65GC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGTV60TS65GC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGTV60TS65GC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 194 W
- Switching Energy: 570µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 33ns/105ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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