RJP3082DPP-00#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
HIGH SPEED IGBT
$1.67
Available to order
Reference Price (USD)
1+
$1.67000
500+
$1.6533
1000+
$1.6366
1500+
$1.6199
2000+
$1.6032
2500+
$1.5865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJP3082DPP-00#T2 from Renesas Electronics America Inc is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RJP3082DPP-00#T2 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Renesas Electronics America Inc
RJP4003ASA-00#Q0
IXYS
IXXX300N60B3
Fairchild Semiconductor
SGH15N120RUFDTU
onsemi
TIG074E8-TL-H
Infineon Technologies
IGW40N65H5FKSA1
onsemi
HGTG11N120CND
onsemi
AFGB30T65SQDN
Infineon Technologies
SKB02N60ATMA1
IXYS
IXXX100N60B3H1
Infineon Technologies