STGB4M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
$0.61
Available to order
Reference Price (USD)
1,000+
$0.57363
2,000+
$0.53950
5,000+
$0.51675
Exquisite packaging
Discount
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Optimize your power systems with the STGB4M65DF2 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the STGB4M65DF2 delivers consistent and reliable operation. Trust STMicroelectronics's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 16 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 68 W
- Switching Energy: 40µJ (on), 136µJ (off)
- Input Type: Standard
- Gate Charge: 15.2 nC
- Td (on/off) @ 25°C: 12ns/86ns
- Test Condition: 400V, 4A, 47Ohm, 15V
- Reverse Recovery Time (trr): 133 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
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