IXXH80N65B4H1
IXYS
IXYS
IGBT 650V 160A 625W TO247AD
$13.96
Available to order
Reference Price (USD)
1+
$9.19000
10+
$8.26900
30+
$7.53367
120+
$6.79875
270+
$6.24752
510+
$5.69625
1,020+
$4.96125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXXH80N65B4H1 by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXXH80N65B4H1 delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXXH80N65B4H1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 430 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 625 W
- Switching Energy: 3.77mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 38ns/120ns
- Test Condition: 400V, 80A, 3Ohm, 15V
- Reverse Recovery Time (trr): 150 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
Related Products
Rohm Semiconductor
RGS80TS65DHRC11
Fairchild Semiconductor
SGS10N60RUFDTU
Infineon Technologies
IKW40N65WR5XKSA1
Infineon Technologies
IKW25N120H3FKSA1
Rohm Semiconductor
RGTV80TS65DGC11
IXYS
IXYA30N120A4HV
Infineon Technologies
AIKW40N65DH5XKSA1
Infineon Technologies
IGW30N60TFKSA1
Microchip Technology
APT50GT120B2RDQ2G
Renesas Electronics America Inc