STGW15M120DF3
STMicroelectronics
STMicroelectronics
IGBT 1200V 30A 259W
$4.22
Available to order
Reference Price (USD)
600+
$5.08900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STGW15M120DF3 from STMicroelectronics is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose STGW15M120DF3 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
- Power - Max: 259 W
- Switching Energy: 550µJ (on), 850µJ (off)
- Input Type: Standard
- Gate Charge: 226 nC
- Td (on/off) @ 25°C: 26ns/122ns
- Test Condition: 600V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr): 270 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
STMicroelectronics
STGB10NC60KDT4
onsemi
FGY75T120SQDN
Microchip Technology
APT35GA90BD15
Rohm Semiconductor
RGTV60TK65GVC11
Renesas Electronics America Inc
RJP30H1DPP-M9#T2
IXYS
IXYH24N170CV1
Harris Corporation
HGTG30N60B3
Rohm Semiconductor
RGS00TS65DHRC11
Infineon Technologies
IRGB4630DPBF
onsemi