FGA50T65SHD
onsemi
onsemi
IGBT TRENCH/FS 650V 100A TO3PN
$4.76
Available to order
Reference Price (USD)
1+
$5.39000
10+
$4.85500
450+
$3.81093
900+
$3.43688
1,350+
$2.92500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FGA50T65SHD Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the FGA50T65SHD ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose FGA50T65SHD for efficient and durable power solutions.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 319 W
- Switching Energy: 1.28mJ (on), 384µJ (off)
- Input Type: Standard
- Gate Charge: 87 nC
- Td (on/off) @ 25°C: 22.4ns/73.6ns
- Test Condition: 400V, 50A, 6Ohm, 15V
- Reverse Recovery Time (trr): 34.6 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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