STGD5H60DF
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H S
$1.22
Available to order
Reference Price (USD)
2,500+
$0.51900
5,000+
$0.49590
12,500+
$0.47940
Exquisite packaging
Discount
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The STGD5H60DF Single IGBT transistor by STMicroelectronics is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The STGD5H60DF ensures precise power control and long-term stability. With STMicroelectronics's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate STGD5H60DF into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
- Power - Max: 83 W
- Switching Energy: 56µJ (on), 78.5µJ (off)
- Input Type: Standard
- Gate Charge: 43 nC
- Td (on/off) @ 25°C: 30ns/140ns
- Test Condition: 400V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 134.5 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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