STGW25H120F2
STMicroelectronics
STMicroelectronics
IGBT H-SERIES 1200V 25A TO-247
$7.78
Available to order
Reference Price (USD)
1+
$8.88000
30+
$7.73033
120+
$6.79467
510+
$5.99775
1,020+
$5.30475
Exquisite packaging
Discount
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Upgrade your power management systems with the STGW25H120F2 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGW25H120F2 provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGW25H120F2 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
- Power - Max: 375 W
- Switching Energy: 600µJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 29ns/130ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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