IXYH85N120C4
IXYS
IXYS
IGBT 1200V 85A GEN4 XPT TO247
$14.05
Available to order
Reference Price (USD)
1+
$14.05000
500+
$13.9095
1000+
$13.769
1500+
$13.6285
2000+
$13.488
2500+
$13.3475
Exquisite packaging
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Optimize your power systems with the IXYH85N120C4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYH85N120C4 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 240 A
- Current - Collector Pulsed (Icm): 420 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
- Power - Max: 1150 W
- Switching Energy: 4.3mJ (on), 2mJ (off)
- Input Type: Standard
- Gate Charge: 192 nC
- Td (on/off) @ 25°C: 35ns/280ns
- Test Condition: 600V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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